Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions
نویسندگان
چکیده
Gang JI 1,2,3)∗, Ze ZHANG , Yanxue CHEN , Shishen YAN , Yihua LIU 3) and Liangmo MEI 3) 1) Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China 2) Institute of Biophysics, Chinese Academy of Sciences, Beijing 100101, China 3) School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China Manuscript received 4 March 2008; in revised form 12 June 2008
منابع مشابه
How to Measure Degree of Spin Polarization
Spintronics is an emerging field of research combining two traditional branches of physics: magnetism and electronics. It is based on the ability of ferromagnetic materials to conduct spin-polarized currents. The effectiveness of spintronics depends on the extent to which a current is spin-polarized [1], which in turn depends on the spin polarization of the ferromagnetic materials. All device d...
متن کاملSpin Detection and Injection Using Ferromagnetic Metal and Semiconductor Hybrid Structure
We investigated spin-dependent transport properties from a viewpoint of spin detection and injection using a ferromagnetic metal / insulator (Al2O3)/ semiconductor tunnel junction with homogeneous and flat interfaces. For spin detection from the semiconductor, spin-polarized electrons were excited in the GaAs layer by circularly polarized light and injected into the permalloy layer. The energy ...
متن کاملمشخصات پیوندگاههای ابررسانا - فرومغناطیس - ابررسانا با پایانههای ابررسانای یکتایی
We study numerically the electronic heat capacity, spin and charge current in a diffusive Superconductor-Ferromagnetic-Superconductor systems، with singlet superconducting leads and non-uniform ferromagnetic layer. Specially, we focus on ferromagnetic layer with domain wall and conical structures incorporation the spin-active interfaces. We investigate, how the 0-π transition is influenced by n...
متن کاملSpin-filter tunnel junction with matched fermi surfaces.
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and targ...
متن کاملSpin Injection in Silicon: The Role of Screening Effects
Spin injection in silicon and other semiconductors by purely electrical means is paramount for building spintronic devices. One of the methods is to inject spins from a ferromagnetic electrode. Recently, a robust spin injection from a ferromagnetic metal contact into a semiconductor has been performed at room temperature [1]. However, the magnitude of the spin accumulation signal obtained with ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009